Apparatus for post exposure bake

ABSTRACT

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims benefit to U.S. patentapplication Ser. No. 15/196,725, filed Jun. 29, 2016, the entirety ofwhich is herein incorporated by reference.

BACKGROUND Field

The present disclosure generally relates to methods and apparatus forprocessing a substrate, and more specifically to methods and apparatusfor performing immersion field guided post exposure bake processes.

Description of the Related Art

Integrated circuits have evolved into complex devices that can includemillions of components (e.g., transistors, capacitors and resistors) ona single chip. Photolithography is a process that may be used to formcomponents on a chip. Generally the process of photolithography involvesa few basic stages. Initially, a photoresist layer is formed on asubstrate. A chemically amplified photoresist may include a resist resinand a photoacid generator. The photoacid generator, upon exposure toelectromagnetic radiation in the subsequent exposure stage, alters thesolubility of the photoresist in the development process. Theelectromagnetic radiation may have any suitable wavelength, for example,a 193 nm ArF laser, an electron beam, an ion beam, or other suitablesource.

In an exposure stage, a photomask or reticle may be used to selectivelyexpose certain regions of the substrate to electromagnetic radiation.Other exposure methods may be maskless exposure methods. Exposure tolight may decompose the photo acid generator, which generates acid andresults in a latent acid image in the resist resin. After exposure, thesubstrate may be heated in a post-exposure bake process. During thepost-exposure bake process, the acid generated by the photoacidgenerator reacts with the resist resin, changing the solubility of theresist during the subsequent development process.

After the post-exposure bake, the substrate, particularly thephotoresist layer, may be developed and rinsed. Depending on the type ofphotoresist used, regions of the substrate that were exposed toelectromagnetic radiation may either be resistant to removal or moreprone to removal. After development and rinsing, the pattern of the maskis transferred to the substrate using a wet or dry etch process.

[000s] The evolution of chip design continually requires fastercircuitry and greater circuit density. The demands for greater circuitdensity necessitate a reduction in the dimensions of the integratedcircuit components. As the dimensions of the integrated circuitcomponents are reduced, more elements are required to be placed in agiven area on a semiconductor integrated circuit. Accordingly, thelithography process must transfer even smaller features onto asubstrate, and lithography must do so precisely, accurately, and withoutdamage. In order to precisely and accurately transfer features onto asubstrate, high resolution lithography may use a light source thatprovides radiation at small wavelengths. Small wavelengths help toreduce the minimum printable size on a substrate or wafer. However,small wavelength lithography suffers from problems, such as lowthroughput, increased line edge roughness, and/or decreased resistsensitivity.

In a recent development, an electrode assembly is utilized to generatean electric field to a photoresist layer disposed on the substrate priorto or after an exposure process so as to modify chemical properties of aportion of the photoresist layer where the electromagnetic radiation istransmitted to for improving lithography exposure/developmentresolution. However, the challenges in implementing such systems havenot yet been adequately overcome.

Therefore, there is a need for improved methods and apparatus forimproving immersion field guided post exposure bake processes.

SUMMARY

In one embodiment, a substrate processing apparatus is provided. Theapparatus includes a chamber body defining a process volume. A majoraxis of the process volume is oriented vertically and a minor axis ofthe process volume is oriented horizontally. A moveable door is coupledto the chamber body and a first electrode is coupled to the door. Thefirst electrode is configured to support a substrate thereon. A secondelectrode is coupled to the chamber body and the second electrode atleast partially defines the process volume. A first plurality of fluidports are formed in a sidewall of the chamber body adjacent the processvolume and a second plurality of fluid ports are formed in the sidewallof the chamber body adjacent the process volume opposite the firstplurality of fluid ports.

In another embodiment, a substrate processing apparatus is provided. Theapparatus includes a chamber body defining a process volume and arotatable pedestal disposed within the process volume. A fluid deliveryarm is configured to deliver cleaning fluid to the process volume. Theapparatus also includes a shield capable of being raised and lowered bya motor and the shield is disposed radially outward of the rotatablepedestal.

In yet another embodiment, a method of processing a substrate isprovided. The method includes positioning a substrate adjacent a processvolume in a process chamber and delivering a process fluid to theprocess volume at a first flow rate. After filling a portion of theprocess volume with process fluid, the process fluid is delivered to theprocess volume at a second flow rate greater than the first flow rate.After completely filling the process volume with process fluid, theprocess fluid is delivered to the process volume at a third flow rateless than the second flow rate. An electric field is generated in theprocess volume during the delivery of the process fluid to the processvolume at the third flow rate.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, may admit to other equally effective embodiments.

FIG. 1 illustrates a schematic, cross-sectional view of a processchamber according to embodiments described herein.

FIG. 2 illustrates a detailed view of a portion of the process chamberof FIG. 1 according to embodiments described herein.

FIG. 3 illustrates a schematic, side view of various components of theprocess chamber of FIG. 1 according to embodiments described herein.

FIG. 4 illustrates a post process chamber according to embodimentsdescribed herein.

FIG. 5 illustrates operations of a method for processing substratesaccording to embodiments described herein.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

FIG. 1 illustrates a schematic, cross-sectional view of a processchamber 100 according to embodiments described herein. In oneembodiment, the process chamber 100 is configured for performingimmersion field guided post exposure bake (iFGPEB) processes. Thechamber 100 is positioned in a vertical orientation such that when asubstrate is being processed, a major axis of the substrate is orientedvertically and a minor axis of the substrate is oriented horizontally.The chamber 100 includes a chamber body 102, which is manufactured froma metallic material, such as aluminum, stainless steel, and alloys andcombinations thereof. Alternatively, the chamber body 102 ismanufactured from polymer materials, such as polytetrafluoroethylene(PTFE), or high temperature plastics, such as polyether ether ketone(PEEK).

The body 102 defines, at least partially, a process volume 104 therein.For example, a sidewall 148 of the body 102 defines a diameter of theprocess volume 104. A major axis of the process volume 104 is orientedvertically and a minor axis of the process volume 104 is orientedhorizontally. A first plurality of fluid ports 126 are formed in thechamber body 102 through the sidewall 148. A second plurality of fluidports 128 are also formed in the sidewall 148 of the chamber body 102opposite the first plurality of fluid ports 126. The first plurality offluid ports 126 are in fluid communication with a process fluid source132 via first conduit 134. The second plurality of fluid ports 128 arein fluid communication with a fluid outlet 136 via a second conduit 138.The process fluid source 132, either alone or in combination with otherapparatus, is configured to preheat process fluid to a temperature ofbetween about 70° C. and about 130° C., such as about 110° C., prior tothe fluid entering the process volume 104.

In one embodiment, a purge gas source 150 is also in fluid communicationwith the process volume 104 via the first fluid conduit 134 and thefirst plurality of fluid ports 126. Gases provided by the purge gassource 150 may include nitrogen, hydrogen, inert gases and the like topurge the processing volume 104 during or after iFGPEB processing. Whendesired, purge gases may be exhausted from the processing volume 104 viathe fluid outlet 136.

A door 106 is operably coupled to the chamber body 102. In theillustrated embodiment, the door 106 is oriented in a processingposition such that the door 106 is disposed adjacent to and abuts thechamber body 102. The door 106 is formed from materials similar to thematerials selected for the chamber body 102. Alternatively, the chamberbody may be formed from a first material, such as a polymeric material,and the door 106 may be formed from a second material different from thefirst material, such as a metallic material. A shaft 107 extends throughthe door 106 and provides an axis (i.e. the Z-axis) about which the door106 rotates to open and close the door 106.

The door 106 may be coupled to a track (not shown) and the door 106 isconfigured to translate along the track in the X-axis. A motor (notshown) may be coupled to the door 106 and/or the track to facilitatemovement of the door 106 along the X-axis. Although the door 106 isillustrated in a closed processing position, opening and closing of thedoor 106 may be performed by moving the door 106 away from the chamberbody 02 along the X-axis prior to rotating the door 106 about theZ-axis. For example, the door 106 may rotate about 90° from theillustrated processing position to a loading position such thatpositioning of a substrate 110 on a first electrode 108 can be performedwith a reduced probability of substrate breakage during loading.

A backing plate 112 is coupled to the door 106 and the first electrode108 is coupled to the backing plate 112. The backing plate 112 is formedfrom materials similar to the door 106 or the chamber body 102,depending on the desired implementation. The first electrode 108 may beformed from an electrically conductive metallic material. In addition,the material utilized for the first electrode 108 may be a non-oxidativematerial. The materials selected for the first electrode 108 provide fordesirable current uniformity and low resistance across the surface ofthe first electrode 108. In certain embodiments, the first electrode 108is a segmented electrode configured to introduce voltagenon-uniformities across the surface of the first electrode 108. In thisembodiment, a plurality of power sources are utilized to power differentsegments of the first electrode 108.

The first electrode 108 is sized to accommodate attachment of thesubstrate 110 thereon. The first electrode 108 is also sized to allowfor positioning adjacent the chamber body 102 and the process volume104. In one embodiment, the first electrode 108 is fixably coupled tothe backing plate 112 and the door 106. In another embodiment, the firstelectrode 108 is rotatably coupled to the backing plate 112 and the door106. In this embodiment, a motor 109 is coupled to the door 106 and isconfigured to impart rotational movement on either the backing plate 112or the first electrode 108. In one embodiment, the first electrode 108is configured as a ground electrode.

A vacuum source 116 is in fluid communication with a substrate receivingsurface of the first electrode 108. The vacuum source 116 is coupled toa conduit 114 which extends from the vacuum source 116 through the door106, the backing plate 112, and the first electrode 108. Generally, thevacuum source 116 is configured to vacuum chuck the substrate 110 to thefirst electrode 108.

A heat source 118, a temperature sensing apparatus 120, a power source122, and a sensing apparatus 124 are coupled to the first electrode 108.The heat source 118 provides power to one or more heating elements, suchas resistive heaters, disposed within the first electrode 108. It isalso contemplated that the heat source 118 may provide power to heatingelements disposed within the backing plate 112. The heat source 118 isgenerally configured to heat either the first electrode 108 and/or orthe backing plate 112 to facilitate preheating of fluid during iFGPEBprocesses. The heat source 118 may also be utilized to maintain adesired temperature of the process fluid during substrate processing inaddition to or distinct from preheating the process fluid. In oneembodiment, the heat source 118 is configured to heat the firstelectrode 108 to a temperature of between about 70° C. and about 130°C., such as about 110° C.

The temperature sensing apparatus 120, such as a thermocouple or thelike, is communicatively coupled to the heat source 118 to providetemperature feedback and facilitate heating of the first electrode 108.The power source 122 is configured to supply, for example, between about1 V and about 20 kV to the first electrode 108. Depending on the type ofprocess fluid utilized, current generated by the power source 122 may beon the order of tens of nano-amps to hundreds of milliamps. In oneembodiment, the power source 122 is configured to generate electricfields ranging from about 1 kV/m to about 2 MV/m. In some embodiments,the power source 122 is configured to operate in either voltagecontrolled or current controlled modes. In both modes, the power sourcemay output AC, DC, and/or pulsed DC waveforms. Square or sine waves maybe utilized if desired. The power source 122 may be configured toprovide power at a frequency of between about 0.1 Hz and about 1 MHz,such as about 5 kHz. The duty cycle of the pulsed DC power or AC powermay be between about 5% and about 95%, such as between about 20% andabout 60%.

The rise and fall time of the pulsed DC power or AC power may be betweenabout 1 ns and about 1000 ns, such as between about 10 ns and about 500ns. The sensing apparatus 124, such as a voltmeter or the like, iscommunicatively coupled to the power source 122 to provide electricalfeedback and facilitate control of the power applied to the firstelectrode 108. The sensing apparatus 124 may also be configured to sensea current applied to the first electrode 108 via the power source 122.

A second electrode 130 is coupled to the chamber body 102 adjacent theprocess volume 104 and partially defined the process volume 104. Similarto the first electrode 108, the second electrode 130 is coupled to aheat source 140, a temperature sensing apparatus 142, a power source144, and a sensing apparatus 146. The heat source 140, a temperaturesensing apparatus 142, a power source 144, and a sensing apparatus 146may function similarly to the heat source 118, a temperature sensingapparatus 120, a power source 122, and a sensing apparatus 124. In oneembodiment, the second electrode 130 is an actively powered electrodeand the first electrode 108 is a ground electrode. As a result of theaforementioned electrode arrangement, acid generated upon exposure of aresist disposed on the substrate 110 may be modulated during iFGPEBprocessing to improve patterning and resist de-protectioncharacteristics.

FIG. 2 illustrates a detailed view of a portion of the process chamber100 of FIG. 1 according to embodiments described herein. The processvolume 104 has a width 214 defined between the substrate 110 and thesecond electrode 130. In one embodiment, the width 214 of the processvolume 104 is between about 1.0 mm and about 10 mm, such as betweenabout 4.0 mm and about 4.5 mm. The relatively small gap between thesubstrate 110 and the second electrode 130 reduces the volume of theprocess volume 104 which enables utilization of reduced quantities ofprocess fluid during iFGPEB processing. In addition, the width 214,which defines a distance between the second electrode 130 and thesubstrate, is configured to provide for a substantially uniformelectrical field across the surface of the substrate 110. Thesubstantially uniform field provides for improved patterningcharacteristics as a result of iFGPEB processing. Another benefit of thegap having the width 214 is a reduction in voltage utilized to generatethe desired electrical field.

In operation, the process volume 104 is filled with process fluid duringiFGPEB processing. To reduce the probability of process fluid leakageout of the process volume, a plurality of O-rings are utilized tomaintain the fluid containment integrity of the process volume. A firstO-ring 202 is disposed in the first electrode 108 on the substratereceiving surface of the first electrode 108. The first O-ring 202 maybe positioned on the first electrode radially inward from an outerdiameter of the substrate 110.

In one example, the first O-ring 202 is positioned on the firstelectrode 108 a distance between about 1 mm and about 10 mm radiallyinward from the outer diameter of the substrate 110. The first O-ring ispositioned to contact the backside of the substrate 110 when thesubstrate is chucked to the first electrode 108. A first surface 206 ofthe sidewall 148 is shaped and sized to contact an edge region of thesubstrate 110 when the substrate 110 is in the illustrated processingposition.

In one embodiment, the first O-ring 202 is disposed in the firstelectrode 108 opposite the first surface 206 of the sidewall 148. It iscontemplated that the first O-ring 202 may prevent the leakage ofprocess fluid from the process volume 104 to a region behind thesubstrate 110, such as the substrate supporting surface of the firstelectrode 108. Advantageously, vacuum chucking of the substrate 110 ismaintained and process fluid is prevented from reaching the vacuumsource 116.

The first electrode 108 has a ledge 210 disposed radially outward of thefirst O-ring. The ledge 210 is disposed radially outward from theposition of the first O-ring 202. A second O-ring 204 is coupled to thefirst electrode 108 radially outward of the ledge 210. A second surface208 of the sidewall 148 is shaped and sized to contact the firstelectrode 108 adjacent to and extending radially inward from the outerdiameter of the first electrode 108. In one embodiment, the secondO-ring 204 is disposed in contact with the second surface 208 of thesidewall 148 when the substrate 110 is disposed in a processingposition. It is contemplated that the second O-ring 204 may prevent theleakage of process fluid from the process volume 108 beyond the outerdiameter of the first electrode 108.

A third O-ring 212 is coupled to the second electrode 130 along an outerdiameter of the second electrode 130. The third O-ring 212 is alsodisposed in contact with the sidewall 148 of the chamber body 102. Thethird O-ring 212 is configured to prevent process fluid from flowingbehind the second electrode 130. Each of the O-rings 202, 204, 212 areformed from an elastomeric material, such as a polymer or the like. Inone embodiment, the O-rings 202, 204, 212 have a circular cross-section.In another embodiment, the O-rings 202, 204, 212 have a non-circularcross-section, such as a triangular cross section or the like. It isalso contemplated that each of the O-rings 202, 204, 212 are subjectedto a compressive force suitable to prevent the passage of process fluidbeyond the O-rings 202, 204, 212 and fluidly seal the process volume104.

FIG. 3 illustrates a schematic, side view of various components of theprocess chamber 100 of FIG. 1 according to embodiments described herein.The process volume 104 is illustrated with the first plurality of fluidports 126 and the second plurality of fluid ports 128 formed therein. Afirst plurality of channels 302 are coupled between the first pluralityof fluid ports 126 and the first conduit 134. A second plurality ofchannels 304 are coupled between the second plurality of fluid ports 128and the second conduit 138.

While 10 channels of the first plurality of channels 302 areillustrated, it is contemplated that between about 5 channels and about30 channels may be implemented, for example, between about 9 channelsand about 21 channels. Similarly, between about 5 channels and about 30channels may be utilized for the second plurality of channels 304, forexample, between about 9 channels and about 21 channels. The number ofchannels 302, 304 are selected to enable suitable fluid flow ratesduring filling of the process volume 104. The channels 302, 304 are alsoconfigured to maintain the rigidity of the process volume 104 when thefirst electrode 108 and substrate 110 are positioned against the firstsurface 206 of the chamber body 102. In one embodiment, 9 first channels302 and 9 second channels 304 are coupled to the process volume 104. Inanother embodiment, 21 first channels 302 and 21 second channels 304 arecoupled to the first process volume 104.

The first plurality of channels 302 and the second plurality of channels304 are formed in the body 102 of the process chamber 100. Each of thefirst and second plurality of channels 302, 304 has a diameter at thefirst fluid ports 126 and second fluid ports 128, respectively, ofbetween about 3.0 mm and about 3.5 mm, such as about 3.2 mm. In anotherembodiment, the diameter of each channel along the diameter of theprocess volume 104 is different. In one embodiment, the channels of thefirst plurality of channels 302 are evenly spaced across the diameter ofthe process volume 104. Similarly, the channels of the second pluralityof channels 304 are evenly spaced across the diameter of the processvolume 104. It is also contemplated that the channels of the first andsecond plurality of channels 302, 304 may also be unevenly spaced acrossthe diameter of the process volume 104.

The spacing of the channels of the first and second plurality ofchannels 302, 304 is configured to reduce turbulence of the processfluid entering and exiting the process volume 104. Because turbulencegenerates bubbles in the process fluid and bubbles act as insulatorswithin the subsequently applied electric field, measures are taken toreduce the formation of bubbles. As described in detail below, flowrates of process fluid are modulated, in combination with the design ofthe first and second plurality of channels 302, 304, to reduceturbulence.

A flow path of process fluid originates from the process fluid source132 and travels through the first conduit 134 into the first pluralityof channels 302. The fluid exits the first plurality of channels 302 viathe first fluid ports 126 into the process volume 104. Once the processvolume 104 is filled with process fluid, the process fluid exits theprocess volume 104 via the second fluid ports 128 into the secondplurality of channels 304. The process fluid continues into the secondconduit 138 and is ultimately removed from the process chamber 100 inthe fluid outlet 136.

In one operational embodiment, a first flow rate utilized to fill theprocess volume 104 with process fluid prior to activation of an electricfield is between about 5 L/min and about 10 L/min. Once the processvolume 104 is filled with process fluid, the electric field is appliedand a second flow rate of process fluid between about 0 L/min and about5 L/min is utilized during iFGPEB processing. The process fluid fill andprocessing time is between about 30 seconds and about 90 seconds, suchas about 60 seconds. In one embodiment, process fluid continues to flowduring iFGPEB processing. In this embodiment, the volume of the processvolume 104 is exchanged between about 1 time and about 10 times persubstrate processed. In another embodiment, the process fluid ispredominantly static during processing. In this embodiment, the volumeof the process volume 104 is not exchanged during substrate processingof each substrate.

In another operational embodiment, a first flow rate is utilized toinitially fill the process volume 104. The first flow rate is less than5 L/min for an amount of time to fill the process volume 104 such thatthe first fluid ports 126 are submerged. A second flow rate of greaterthan 5 L/min is them utilized to fill the remainder of the processvolume 104. During application of electric field in iFGPEB processing, athird flow rate of less than 5 L/min is utilized. The flow ratemodulation between the first and second flow rates is configured toreduce turbulence of the fluid with in the process volume 104 and reduceor eliminate the formation of bubbles therein. However, if bubbles areformed, the buoyancy of the bubbles enables the bubbles to escape fromthe process volume 104 via the second fluid ports 128, therebyminimizing the insulating effect of the bubbles on the electric fieldduring iFGPEB processing. Accordingly, a more uniform electric field maybe achieved to improve iFGPEB processing.

FIG. 4 illustrates a post process chamber 400 according to embodimentdescribed herein. After iFGPEB processing of a substrate in the processchamber 100, the substrate is transferred to the post process chamber400. The post process chamber 400 includes a chamber body 402 defining aprocess volume 404 and a pedestal 408 disposed in the process volume404. A substrate 406 positioned on the pedestal 408 is post processed bycooling and rinsing the substrate 406. By combining cooling and rinsing,the bake to cool delay of substrate processing is minimized.

When the substrate 406 is positioned on the pedestal 408, the substrateis vacuum chucked by application of vacuum from a vacuum source 414.Cooling of the substrate 406 begins once the substrate 406 is chucked.Fluid conduits 410 are formed in the pedestal 408 and the fluid conduits410 are in fluid communication with a cooling fluid source 412. Coolingfluid is flowed through the fluid conduits 410 to cool the substrate406.

During cooling, the substrate 406 is also rinsed to remove any remainingprocess fluid still present on the substrate surface. Rinse fluid isdispensed onto the device side of the substrate 406 from a fluiddelivery arm 418 which may include fluid delivery nozzles 420. Rinsefluid, such as de-ionized water or the like, is provided from a rinsefluid source 422 via the arm 418 and the nozzles 420.

After rinsing and cooling, the substrate 406 is spin dried by rotatingthe pedestal 408. The pedestal 408 is coupled to a power source 416which enables rotation of the pedestal 408. During spin drying of thesubstrate 406, a shield 424 is raised to collect fluid spun off of thesubstrate 406. The shield 424 is ring like in shape and sized with aninner diameter greater than a diameter of the pedestal 408. The shield424 is also disposed radially outward of the pedestal 408. The shield424 is coupled to a motor 428 which raises and lowers the shield 424such that the shield 424 extends above the substrate 406 during spindrying. Fluid collected during spin drying by the shield 424 is removedfrom the process volume 404 via a drain 426. It is noted that duringcooling and rinsing of the substrate 406, the shield 424 may be disposedin a lowered position and subsequently raised during spin drying of thesubstrate 406. The shield 424 may also be lowered during loading andunloading of the substrate 406.

Once the substrate 406 has been dried, resist on the substrate 406 isdeveloped by the application of a developer, such as tetramethylammoniumhydroxide (TMAH). In one embodiment, the developer is dispensed from thearm 418 and nozzles 420. After development, the substrate 406 mayoptionally be rinsed with deionized water and dried again to prepare thesubstrate 406 for subsequent processing.

FIG. 5 illustrates operations of a method 500 for processing substratesaccording to embodiments described herein. At operation 510, a substrateis positioned adjacent or within the process volume of a processchamber, such as the process chamber 100. The process volume is filledwith process fluid at operation 520 and iFGPEB processing is performedat operation 530. At operation 540, process fluid is removed from theprocess volume and the substrate is transferred to a post processchamber, such as the post process chamber 400, at operation 550.Optionally, the substrate may be spin dried during operation 540 toprevent spillage of process fluid during substrate handling.

At operation 560, the substrate is rinsed with cleaning fluid to removeprocess fluid from the substrate. Operation 560 may also include spindrying of the substrate in certain embodiments. At operation 570, resistdisposed on the substrate is developed and at operation 580, thesubstrate is again rinsed with cleaning fluid. At operation 590, thesubstrate is spin dried and prepared for subsequent processing.

In summation, apparatus and method for improving iFGPEB processing areprovided. Process chambers described herein enable efficient use ofprocess fluid and improved application of electric field during iFGPEBoperations. Post processing of a substrate is also improved by reducingthe bake to cool delay by utilizing apparatus which enables concurrentcooling and rinsing operations. Thus, iFGPEB processing operations canbe improved by utilizing the apparatus and methods described herein.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A substrate processing apparatus, comprising: achamber body defining a process volume; a rotatable pedestal disposedwithin the process volume; a fluid delivery arm configured to delivercleaning fluid to the process volume; and a shield movable between araised position and a lowered position, the shield having an innerdiameter greater than an outer diameter of the rotatable pedestal,wherein the shield is disposed radially outward of the rotatablepedestal.
 2. The apparatus of claim 1, wherein the rotatable pedestalincludes a vacuum chuck.
 3. The apparatus of claim 2, wherein a fluidconduit is formed in the pedestal.
 4. The apparatus of claim 3, whereinthe fluid conduit is in fluid communication with a cooling fluid source.5. The apparatus of claim 1, wherein the fluid delivery arm is coupledto the chamber body and extends through the process volume radiallyinward of the outer diameter of the rotatable pedestal.
 6. The apparatusof claim 5, wherein the fluid delivery arm comprises one or morenozzles.
 7. The apparatus of claim 6, wherein the fluid delivery arm andthe one or more nozzles are in fluid communication with a rinse fluidsource.
 8. The apparatus of claim 7, wherein the fluid delivery arm andthe one or more nozzles are configured to dispense a developer materialcomprising tetramethlyammonium hydroxide.
 9. The apparatus of claim 1,wherein the shield is ring shaped.
 10. The apparatus of claim 1, whereinthe shield is configured to extend above the rotatable pedestal when theshield is disposed in the raised position.
 11. The apparatus of claim10, wherein the shield is configured to be positioned below the pedestalin the lowered position during loading and unloading of a substrate onthe rotatable pedestal.
 12. The method of claim 1, further comprising: adrain coupled to the chamber body and in fluid communication with theprocess volume, wherein the drain is coupled to the chamber bodyradially inward of the inner diameter of the shield.
 13. A method ofprocessing a substrate, comprising: lowering a ring shaped shield whichhas an inner diameter greater than an outer diameter of a pedestal;positioning a substrate on the pedestal; raising the ring shaped shieldto a position that extends above the substrate; flowing cooling fluidthrough fluid conduits formed in the pedestal; rinsing the substrate bydelivering a rinse fluid through a fluid delivery arm; and rotating thepedestal to spin dry the substrate.
 14. The method of claim 13, furthercomprising: delivering a developer material to the substrate after spindrying the substrate.
 15. The method of claim 14, wherein the developermaterial comprises tetramethlyammonium hydroxide.
 16. The method ofclaim 13, wherein the ring shaped shield is disposed in the positionthat extends above the substrate during the flowing cooling fluidthrough fluid conduits formed in the pedestal, during the rinsing thesubstrate, and during the rotating the pedestal to spin dry thesubstrate.
 17. The method of claim 14, further comprising: lowering thering shaped shield after spin drying the substrate and delivering thedeveloper material; and unloading the substrate from the pedestal.
 18. Amethod of processing a substrate, comprising: positioning a substrateadjacent to a process volume in a process chamber; delivering a processfluid to the process volume at a first flow rate; after filling aportion of the process volume with process fluid, delivering the processfluid to the process volume at a second flow rate greater than the firstflow rate; after completely filling the process volume with processfluid, delivering the process fluid to the process volume at a thirdflow rate less than the second flow rate; and generating an electricfield in the process volume during the delivering the process fluid tothe process volume at a third flow rate.
 19. The method of claim 18,wherein the first and third flow rates are less than about 5 L/min. 20.The method of claim 19, wherein the second flow rate is greater thanabout 5 L/min.